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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1194 DESCRIPTION With TO-220Fa package High DC current gain High speed switching DARLINGTON Complement to type 2SD1633 APPLICATIONS For power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Fig.1 simplified outline (TO-220Fa) and symbol HAN INC Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Base current SEM GE Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE -100 -100 -7 -5 -8 -0.5 UNIT V V V A A A Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2 W 30 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1194 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-0.2A; RBE= IC=-3A ;IB=-3mA IC=-3A ;IB=-3mA VCB=-100V; IE=0 VCE=-100V; IB=0 VEB=-7V; IC=0 IC=-3A ; VCE=-3V 1500 MIN -100 -1.5 -2.0 -100 -100 -5 10000 |I |I TYP. MAX UNIT V V V A A mA SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE Switching times ton tstg tf Turn-on time Storage time Fall time HAN INC P 4000-10000 SEM GE IC=-3A ;IB1=-IB2=-3mA VCC=-50V OND IC TOR UC 3.0 |I |I |I 5.0 3.0 s s s hFE Classifications Q 1500-6000 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1194 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: A 0.15 mm) 3 |
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